(c) Length dependence of δ E showing a linear 1 / L dependence. As expected in the long junction regime, δ E depends only on device length L and is almost density independent through both the electron and hole doping. Ghosh, Bulletin of the American Physical Society, 59 (1) (2014). (b) Energy δ E extracted from the slope of log ( I C ) vs T for junctions (B–G). Tunneling through graphene and topological insulators in presence of pn junction: transport properties and device prospects Redwan N. Both methods provide consistent results and indicate high contact transparency for n doping. τ is calculated via two methods: comparing the normal conductance G N to the ballistic limit G 0 = N e 2 / h (blue), and fitting the critical current I C vs temperature T (red). Inset: Transmission coefficient τ of junction A. At positive V G, G N of all junctions is found to approach G 0 = N e 2 / h (gray dashed line), indicating consistently high contact transparency for n doping in these devices. Even though the device lengths are different by up to a factor of 10, the three curves are very close to each other, thus proving the ballistic nature of these junctions. (a) Normal conductance of junctions A–D normalized by the width of the junctions G N / W. Home Browse by Title Periodicals Journal of Computational Electronics Vol.
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